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適合用于時(shí)鐘應(yīng)用的OSC有源振蕩器X1G005591026500,石英晶體振蕩器,有源貼片晶振中使用的石英晶體是一塊非常小的、薄的石英切割片或晶片,其兩個(gè)平行表面被金屬化以進(jìn)行所需的電連接。一塊石英晶體的物理尺寸和厚度受到嚴(yán)格控制,因?yàn)樗鼤?huì)影響振蕩的最終頻率或基本頻率?;l一般稱為晶體的“特征頻率”。一旦切割和成型,晶體就不能在任何其他頻率下使用。換句話說,石英晶體的大小和形狀決定了石英晶體振蕩器的基本振蕩頻率。
適合用于時(shí)鐘應(yīng)用的OSC有源振蕩器X1G005591026500,石英晶振蕩器體是一種各向異性晶體。 它由以特定方位角切割的薄片制成,然后在晶片的相應(yīng)表面上涂有銀。 安裝一對(duì)金屬塊作為極板,構(gòu)成石英有源晶體振蕩器 。 石英晶體可用作振蕩電路的原因在于其壓電效應(yīng)。 當(dāng)在晶片外部的兩個(gè)板之間添加電場(chǎng)時(shí),晶體將產(chǎn)生機(jī)械變形; 相反,當(dāng)在板之間施加機(jī)械力時(shí),將在晶體中產(chǎn)生電場(chǎng)。 這種現(xiàn)象稱為壓電效應(yīng)。
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X1G005591025400 | SG-8018CE | 2.444400 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591025500 | SG-8018CE | 13.977600 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591025600 | SG-8018CE | 75.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591025700 | SG-8018CE | 13.516800 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591025800 | SG-8018CE | 64.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591025900 | SG-8018CE | 9.830400 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591026000 | SG-8018CE | 29.491200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005591026100 | SG-8018CE | 37.500000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005591026200 | SG-8018CE | 16.384000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591026300 | SG-8018CE | 135.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 8.1 mA |
X1G005591026400 | SG-8018CE | 64.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591026500 | SG-8018CE | 20.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591026600 | SG-8018CE | 12.288000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591026700 | SG-8018CE | 60.956200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591026800 | SG-8018CE | 52.441700 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591026900 | SG-8018CE | 65.794020 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591027000 | SG-8018CE | 14.745600 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591027100 | SG-8018CE | 16.500000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591027200 | SG-8018CE | 7.372800 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591027300 | SG-8018CE | 35.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005591027400 | SG-8018CE | 64.800000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591027500 | SG-8018CE | 33.300000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005591027600 | SG-8018CE | 66.667000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591027700 | SG-8018CE | 15.625000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |