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X1G005591029700愛(ài)普生有源晶振型號(hào)SG-8018CE25.000000MHz TJHSA
有源晶振選型標(biāo)準(zhǔn):
推薦愛(ài)普生SG-8018CE為例說(shuō)明有源晶振選型步驟:
1:選擇外形和尺寸,找到對(duì)應(yīng)的愛(ài)普生晶振系列號(hào)(3225→SG-8018CE)
2:選擇頻點(diǎn)(25MHz→25.000000MHz)
3:選擇工作電壓(1.62 to 3.63 V→T)
4:選擇精度(±50ppm→J)
5:選擇溫度范圍(-40~+105℃→H)
6:第一引腳輸出待機(jī)ST(→S)
以上選定的參數(shù)為:SG-8018CE/25MHz/±50PPM/1.62 to 3.63 V/-40~+105℃,對(duì)應(yīng)愛(ài)普生標(biāo)準(zhǔn)料號(hào)是X1G005591029700
型號(hào)是SG-8018CE25.000000MHz TJHSA
X1G005591029700愛(ài)普生有源晶振,SG-8018CE25.000000MHz TJHSA石英晶體振蕩器
愛(ài)普生有源晶振編碼
型號(hào)
頻率
長(zhǎng)X寬X高
輸出波
電源電壓
工作溫度
頻差
最大值
X1G005591022400
SG-8018CE
25.175000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591022500
SG-8018CE
12.352000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591022600
SG-8018CE
20.480000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591022700
SG-8018CE
21.333000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591022800
SG-8018CE
44.236000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591022900
SG-8018CE
100.000000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 5.9 mA
X1G005591023000
SG-8018CE
27.120000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591023100
SG-8018CE
30.000000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591029700
SG-8018CE
25.000000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591023400
SG-8018CE
12.500000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591023500
SG-8018CE
38.200000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591023600
SG-8018CE
16.670000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591023700
SG-8018CE
37.125000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591023800
SG-8018CE
20.480000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591023900
SG-8018CE
6.750000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591024000
SG-8018CE
24.000000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591024100
SG-8018CE
33.333000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591024200
SG-8018CE
24.545454 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 4.4 mA
X1G005591024300
SG-8018CE
16.500000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591024400
SG-8018CE
3.579545 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591024500
SG-8018CE
76.500000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 5.9 mA
X1G005591024600
SG-8018CE
19.800000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591024700
SG-8018CE
1.024000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591024800
SG-8018CE
14.318000 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591024900
SG-8018CE
4.915200 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 3.5 mA
X1G005591025000
SG-8018CE
66.666660 MHz
3.20 x 2.50 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
≤ 5.2 mA
建議對(duì)有源晶振進(jìn)行替換,可以參考上面,不過(guò)在替換時(shí)需要慎重,不同品牌生產(chǎn)工藝可能有較大差異,紙面參數(shù)僅具參考價(jià)值,3225有源晶振仍需通過(guò)樣品試用來(lái)測(cè)試.
常規(guī)有源晶振參數(shù)特點(diǎn):
頻點(diǎn)范圍:1MHz~170MHz(CMOS輸出):
通常工作電壓范圍:1.6V~3.3V
頻率穩(wěn)定度:(全溫度工作范圍內(nèi)):15ppm、20ppm、25ppm、50ppm
X1G005591029700愛(ài)普生有源晶振,SG-8018CE25.000000MHz TJHSA石英晶體振蕩器