愛(ài)普生有源晶振X1G005591030700和無(wú)源晶振振動(dòng)頻率區(qū)別
當(dāng)外加交變電壓的頻率與晶片的固有頻率由晶片的尺寸和形狀決定相等時(shí),機(jī)械振動(dòng)的幅度將急劇增加,這種現(xiàn)象稱(chēng)為壓電諧振.壓電諧振狀態(tài)的建立和維持都必須借助于振蕩器電路才能實(shí)現(xiàn).愛(ài)普生貼片晶振是一個(gè)串聯(lián)型振蕩器,晶體管T1和T2構(gòu)成的兩級(jí)放大器,石英晶體XT與電容C2構(gòu)成LC電路.在這個(gè)電路中石英晶體相當(dāng)于一個(gè)電感,C2為可變電容器,調(diào)節(jié)其容量即可使電路進(jìn)入諧振狀態(tài).
愛(ài)普生OSC晶振,X1G005591030700有源XO晶振
愛(ài)普生有源晶振編碼
型號(hào)
頻率
長(zhǎng)X寬X高
輸出波
電源電壓
工作溫度
頻差
最大值
X1G005591029100
SG-8018CE
20.160000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591029200
SG-8018CE
47.500000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591029300
SG-8018CE
11.400000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591029400
SG-8018CE
52.500000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591029500
SG-8018CE
12.600000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591029600
SG-8018CE
66.666600MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591029700
SG-8018CE
25.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591029800
SG-8018CE
10.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591029900
SG-8018CE
50.193300MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591030000
SG-8018CE
13.330000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030100
SG-8018CE
27.600000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591030200
SG-8018CE
68.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591030300
SG-8018CE
63.200000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591030400
SG-8018CE
3.840000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030500
SG-8018CE
20.971520MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591030600
SG-8018CE
4.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030700
SG-8018CE
8.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030800
SG-8018CE
7.159090MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030900
SG-8018CE
2.048000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591031000
SG-8018CE
25.600000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031100
SG-8018CE
30.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031200
SG-8018CE
32.500000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031300
SG-8018CE
22.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031400
SG-8018CE
4.915200MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591031500
SG-8018CE
3.579546MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591031600
SG-8018CE
21.250000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031700
SG-8018CE
3.612700MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
有源晶振電路原理及與無(wú)源晶振的聯(lián)系與區(qū)別有源晶振電路及工作原理簡(jiǎn)述有源晶振是由石英晶體組成的,石英晶片之所以能當(dāng)為振蕩器使用,是基于它的壓電效應(yīng)：日產(chǎn)晶振在晶片的兩個(gè)極上加一電場(chǎng),會(huì)使晶體產(chǎn)生機(jī)械變形;在石英晶片上加上交變電壓,晶體就會(huì)產(chǎn)生機(jī)械振動(dòng),同時(shí)機(jī)械變形振動(dòng)又會(huì)產(chǎn)生交變電場(chǎng),雖然這種交變電場(chǎng)的電壓極其微弱,但其振動(dòng)頻率是十分穩(wěn)定的.
愛(ài)普生OSC晶振,X1G005591030700有源XO晶振
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