86-0755-27838351
頻率:0.67~170MHZ
尺寸:5.0*3.2mm
愛(ài)普生株式會(huì)社愛(ài)普生拓優(yōu)科夢(mèng),(EPSON — YOCOM)1942年成立時(shí)是精工集團(tuán)的第三家手表制造公司,以石英手表起家的愛(ài)普生公司到后續(xù)的生產(chǎn)貼片晶振,壓電石英晶體,1996年2月在中國(guó)蘇州投資建廠,在當(dāng)時(shí)員工人數(shù)就達(dá)2000人,總投資4.055億美元,公司占地200畝,現(xiàn)已經(jīng)是世界500強(qiáng)企業(yè).
愛(ài)普生晶振,有源晶振,SG-8101CB晶振,X1G0052010011晶振,貼片式石英晶體振蕩器,低電壓?jiǎn)?dòng)功率,并且有多種電壓供選擇,比如有1.8V,2.5V,3.3V,3.8V,5V等,產(chǎn)品被廣泛應(yīng)用于,平板筆記本,衛(wèi)星系統(tǒng),光纖通道,千兆以太網(wǎng),串行ATA,串行連接SCSI,PCI-EXPress的SDH / SONET發(fā)射基站等領(lǐng)域.符合RoHS/無(wú)鉛.
超小型石英貼片晶振晶片的設(shè)計(jì):石英晶片的長(zhǎng)寬尺寸已要求在±0.002mm內(nèi),由于貼片晶振晶片很小導(dǎo)致晶體的各類寄生波(如長(zhǎng)度伸縮振動(dòng),面切變振動(dòng))與主振動(dòng)(厚度切變振動(dòng))的耦合加強(qiáng),從而造成如若石英晶振晶片的長(zhǎng)度或?qū)挾瘸叽缭O(shè)計(jì)不正確、使得振動(dòng)強(qiáng)烈耦合導(dǎo)致石英晶振的晶片不能正常工作,從而導(dǎo)致產(chǎn)品在客戶端不能正常使用,晶振的研發(fā)及生產(chǎn)超小型石英晶振完成晶片的設(shè)計(jì)特別是外形尺寸的設(shè)計(jì)是首要需解決的技術(shù)問(wèn)題,公司在此方面通過(guò)理論與實(shí)踐相結(jié)合,模擬出一整套此石英晶振晶片設(shè)計(jì)的計(jì)算機(jī)程序,該程序晶振的晶片外形尺寸已全面應(yīng)用并取得很好的效果。
項(xiàng)目 |
符號(hào) |
規(guī)格說(shuō)明 |
條件 |
輸出頻率范圍 |
f0 |
0.67~170MHZ |
請(qǐng)聯(lián)系我們以便獲取其它可用頻率的相關(guān)信息 |
電源電壓 |
VCC |
1.8~3.3V |
請(qǐng)聯(lián)系我們以了解更多相關(guān)信息 |
儲(chǔ)存溫度 |
T_stg |
-55℃ to +125℃ |
裸存 |
工作溫度 |
T_use |
G: -40℃ to +85℃ |
請(qǐng)聯(lián)系我們查看更多資料http://www.wzjingmei.com |
H: -40℃ to +105℃ |
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J: -40℃ to +125℃ |
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頻率穩(wěn)定度 |
f_tol |
J: ±50 × 10-6 |
|
L: ±100 × 10-6 |
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T: ±150 × 10-6 |
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功耗 |
ICC |
3.5 mA Max. |
無(wú)負(fù)載條件、最大工作頻率 |
待機(jī)電流 |
I_std |
3.3μA Max. |
ST=GND |
占空比 |
SYM |
45 % to 55 % |
50 % VCC 極, L_CMOS≦15 pF |
輸出電壓 |
VOH |
VCC-0.4V Min. |
|
VOL |
0.4 V Max. |
|
|
輸出負(fù)載條件 |
L_CMOS |
15 pF Max. |
|
輸入電壓 |
VIH |
80% VCC Max. |
ST 終端 |
VIL |
20 % VCC Max. |
||
上升/下降時(shí)間 |
tr / tf |
4 ns Max. |
20 % VCC to 80 % VCC 極, L_CMOS=15 pF |
振蕩啟動(dòng)時(shí)間 |
t_str |
3 ms Max. |
t=0 at 90 % |
頻率老化 |
f_aging |
±3 × 10-6 / year Max. |
+25 ℃, 初年度,第一年 |
愛(ài)普生有源進(jìn)口日產(chǎn)晶振型號(hào)列表:
愛(ài)普生有源進(jìn)口日產(chǎn)晶振編碼列表:
Model
Frequency
LxWxH
Output Wave
Ope Temperature
Freq. Tol.
I [Max]
25°C Aging
Aging2
Symmetry
SG-8101CB
133.000000 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 105 °C
+/-50 ppm
≤ 8.1 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CB
100.000000 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 85 °C
+/-15 ppm
≤ 5.9 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CB
148.351648 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 85 °C
+/-15 ppm
≤ 8.1 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CB
148.500000 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 85 °C
+/-15 ppm
≤ 8.1 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CB
27.000000 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 85 °C
+/-15 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CB
50.000000 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 85 °C
+/-15 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CB
24.545400 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CB
28.636400 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CB
48.000000 MHz
5.00 x 3.20 x 1.20 mm
CMOS
-40 to 85 °C
+/-15 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
X1G0052010011
SG-8101CB
133.000000 MHz
5.00 x 3.20 x
1.20 mm
CMOS
-40 to 105 °C
+/-50 ppm
≤ 8.1 mA
Included in
Frequency tolerance First year
45 to 55 %
X1G0052010012
SG-8101CB
100.000000
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 85 °C
+/-15
ppm
≤
5.9 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0052010013
SG-8101CB
148.351648
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 85 °C
+/-15
ppm
≤
8.1 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0052010014
SG-8101CB
148.500000
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 85 °C
+/-15
ppm
≤
8.1 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0052010015
SG-8101CB
27.000000
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 85 °C
+/-15
ppm
≤
4.4 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0052010016
SG-8101CB
50.000000
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 85 °C
+/-15
ppm
≤
4.4 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0052010017
SG-8101CB
24.545400
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
4.4 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0052010018
SG-8101CB
28.636400
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
4.4 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0052010019
SG-8101CB
48.000000
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 85 °C
+/-15
ppm
≤
4.4 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0052010020
SG-8101CB
153.600000
MHz
5.00
x 3.20 x 1.20 mm
CMOS
-40
to 105 °C
+/-50
ppm
≤
8.1 mA
Included
in Frequency tolerance First year
45
to 55 %
存儲(chǔ)事項(xiàng):(1) 在更高或更低溫度或高濕度環(huán)境下長(zhǎng)時(shí)間保存時(shí),會(huì)影響貼片石英晶體振蕩器頻率穩(wěn)定性或焊接性。請(qǐng)?jiān)谡囟群蜐穸拳h(huán)境下保存這些石英晶振產(chǎn)品,并在開(kāi)封后盡可能進(jìn)行安裝,以免長(zhǎng)期儲(chǔ)藏。 正常溫度和濕度: 溫度:+15°C 至 +35°C,濕度 25 % RH 至 85 % RH。 (2) 請(qǐng)仔細(xì)處理內(nèi)外盒與卷帶。外部壓力會(huì)導(dǎo)致卷帶受到損壞。愛(ài)普生晶振,有源晶振,SG-8101CB晶振,X1G0052010011晶振
耐焊性:將晶振加熱包裝材料至+150°C以上會(huì)破壞四腳貼片晶振產(chǎn)品特性或損害產(chǎn)品。如需在+150°C以上焊接,建議使用SMD晶振產(chǎn)品。在下列回流條件下,對(duì)石英晶振產(chǎn)品甚至SMD貼片晶振使用更高溫度,會(huì)破壞晶振特性。建議使用下列配置情況的回流條件。安裝這些貼片晶振之前,應(yīng)檢查焊接溫度和時(shí)間。同時(shí),在安裝條件更改的情況下,請(qǐng)?jiān)俅芜M(jìn)行檢查。如果需要焊接的晶振產(chǎn)品在下列配置條件下進(jìn)行焊接,請(qǐng)聯(lián)系我們以獲取耐熱的相關(guān)信息。
自動(dòng)安裝和真空化引發(fā)的沖擊會(huì)破壞產(chǎn)品特性并影響這些產(chǎn)品。請(qǐng)?jiān)O(shè)置安裝條件以盡可能將沖擊降至最低,并確保在安裝前未對(duì)晶振特性產(chǎn)生影響。條件改變時(shí),請(qǐng)重新檢查安裝條件。同時(shí),在安裝前后,請(qǐng)確保5032mm壓電石英晶體產(chǎn)品未撞擊機(jī)器或其他電路板等。
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