86-0755-27838351
頻率:100MHZ
尺寸:7.0×5.0mm
SiliconCrystal,550AE100M000DGR,Si550壓控振蕩器,7050mm,100MHZ,尺寸7.0×5.0mm,頻率為100MHZ,歐美有源振蕩器,有源壓控晶振,VCXO壓控晶體振蕩器,7050mm壓控晶振,貼片壓控晶振,100MHZ壓控晶振,六腳壓控晶振,低抖動(dòng)壓控晶振,低損耗壓控晶振,低電壓壓控晶振,低相位壓控晶振,低相噪壓控晶振,光學(xué)模塊壓控晶振,數(shù)據(jù)恢復(fù)應(yīng)用壓控晶振,通信設(shè)備壓控晶振,具有低抖動(dòng)低電壓的特點(diǎn)。產(chǎn)品很適合用于SONET/SDH,xxDSL,110 GbE LAN/WAN,低抖動(dòng)時(shí)鐘生成,光學(xué)模塊,時(shí)鐘和數(shù)據(jù)恢復(fù)等應(yīng)用。
Si550 VCXO利用Skyworks Solutions的先進(jìn)DSPLL®電路提供高頻率的低抖動(dòng)時(shí)鐘。Si550支持任何頻率從10到945MHz,并選擇頻率到1417MHz。不像傳統(tǒng)的VCXO晶振,其中每個(gè)輸出需要不同的晶體頻率,Si550使用一個(gè)固定晶體來(lái)提供寬范圍的輸出頻率。這種基于IC的方法允許晶體諧振器提供卓越的頻率穩(wěn)定性和可靠性。SiliconCrystal,550AE100M000DGR,Si550壓控振蕩器,7050mm,100MHZ.
SiliconCrystal,550AE100M000DGR,Si550壓控振蕩器,7050mm,100MHZ,尺寸7.0×5.0mm,頻率為100MHZ,歐美有源振蕩器,有源壓控晶振,VCXO壓控晶體振蕩器,7050mm壓控晶振,貼片壓控晶振,100MHZ壓控晶振,六腳壓控晶振,低抖動(dòng)壓控晶振,低損耗壓控晶振,低電壓壓控晶振,低相位壓控晶振,低相噪壓控晶振,光學(xué)模塊壓控晶振,數(shù)據(jù)恢復(fù)應(yīng)用壓控晶振,通信設(shè)備壓控晶振,具有低抖動(dòng)低電壓的特點(diǎn)。產(chǎn)品很適合用于SONET/SDH,xxDSL,110 GbE LAN/WAN,低抖動(dòng)時(shí)鐘生成,光學(xué)模塊,時(shí)鐘和數(shù)據(jù)恢復(fù)等應(yīng)用。
Si550 VCXO利用Skyworks Solutions的先進(jìn)DSPLL®電路提供高頻率的低抖動(dòng)時(shí)鐘。Si550支持任何頻率從10到945MHz,并選擇頻率到1417MHz。不像傳統(tǒng)的VCXO晶振,其中每個(gè)輸出需要不同的晶體頻率,Si550使用一個(gè)固定晶體來(lái)提供寬范圍的輸出頻率。這種基于IC的方法允許晶體諧振器提供卓越的頻率穩(wěn)定性和可靠性。SiliconCrystal,550AE100M000DGR,Si550壓控振蕩器,7050mm,100MHZ.
SiliconCrystal,550AE100M000DGR,Si550壓控振蕩器,7050mm,100MHZ 參數(shù)表
Parameter | Symbol | Test Condition | Min | Typ | Max | Units | |||||||||||||||
Supply Voltage1 | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||
2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||
1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||
Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
|
120 108 99 90 |
130 117 108 98 |
mA | |||||||||||||||
tristate mode | 60 | 75 | mA | ||||||||||||||||||
Output Enable (OE)2 | VIH | 0.75 x V DD | V | ||||||||||||||||||
VIL | 0.5 | V | |||||||||||||||||||
Operating Temperature Range | TA | –40 | 85 | °C |
Parameter | Symbol | Test Condition | Min | Typ | Max | Units | |||||||||||||||
Control Voltage Tuning Slope1,2,3 | KV | 10 to 90% of V DD |
|
33 45 90 135 180 356 |
|
ppm/V | |||||||||||||||
Control Voltage Linearity4 | LVC | BSL | –5 | ±1 | +5 | % | |||||||||||||||
Incremental | –10 | ±5 | +10 | % | |||||||||||||||||
Modulation Bandwidth | BW | 9.3 | 10.0 | 10.7 | kHz | ||||||||||||||||
VC Input Impedance | Z VC | 500 | kΩ | ||||||||||||||||||
Nominal Control Voltage | VCNOM | @ fO | V DD/2 | V | |||||||||||||||||
Control Voltage Tuning Range | VC | 0 | V DD | V |
Parameter | Symbol | Test Condition | Min | Typ | Max | Units | |||||||||||||||
Nominal Frequency1,2,3 | fO | LVDS/CML/LVPECL |
|
100 |
|
MHz | |||||||||||||||
CMOS | 10 | 160 | MHz | ||||||||||||||||||
Temperature Stability1,4 | TA = –40 to +85 ºC |
–20 –50 –100 |
|
+20 +50 +100 |
ppm | ||||||||||||||||
Absolute Pull Range1,4 | APR | ±12 | ±375 | ppm | |||||||||||||||||
Aging | Frequency drift over first year. | ±3 | ppm | ||||||||||||||||||
Frequency drift over 15 year life. | ±10 | ||||||||||||||||||||
Power up Time5 | tOSC | 10 | ms |
Parameter | Symbol | Test Condition | Min | Typ | Max | Units | |||||||||||||||
LVPECL Output Option1 | VO | mid-level | V DD – 1.42 | V DD – 1.25 | V | ||||||||||||||||
VOD | swing (diff) | 1.1 | 1.9 | VPP | |||||||||||||||||
VSE | swing (single-ended) | 0.55 | 0.95 | VPP | |||||||||||||||||
LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | |||||||||||||||
VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | ||||||||||||||||
CML Output Option2 | VO | 2.5/3.3 V option mid-level | — | V DD – 1.30 | — | V | |||||||||||||||
1.8 V option mid-level | — | V DD – 0.36 | — | V | |||||||||||||||||
VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | ||||||||||||||||
1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | |||||||||||||||||
CMOS Output Option3 | V OH | I OH= 32 mA | 0.8 x V DD | — | V DD | V | |||||||||||||||
VOL | I OL= 32 mA | — | — | 0.4 | V | ||||||||||||||||
Rise/Fall time (20/80%) | tR,t F | LVPECL/LVDS/CML | — | — | 350 | ps | |||||||||||||||
CMOS with CL= 15 pF | — | 1 | — | ns | |||||||||||||||||
Symmetry (duty cycle) | SYM |
LVPECL: V DD – 1.3 V (diff) LVDS: 1.25 V (diff) CMOS: V DD/2 |
45 | — | 55 | % |
SiliconCrystal,550AE100M000DGR,Si550壓控振蕩器,7050mm,100MHZ 尺寸圖
SiliconCrystal,550AE100M000DGR,Si550壓控振蕩器,7050mm,100MHZ
有源晶振產(chǎn)品特點(diǎn):
可用于的任何頻率
10至945MHz,然后選擇頻率至1.4GHz
第三代DSPLL®卓越的抖動(dòng)性能(0.5ps)
溫度穩(wěn)定性是SAW振蕩器
出色的PSRR性能
內(nèi)部固定晶體頻率
確保高可靠性和低成本
變老
可用的CMOS、LVPECL、LVDS和CML輸出
3.3、2.5和1.8 V電源選項(xiàng)
行業(yè)標(biāo)準(zhǔn)5x7mm包裝和引腳
無(wú)鉛/符合RoHS
Manufacturer Part Number原廠代碼 | 歐美晶振品牌 | Series型號(hào) | Frequency 頻率 | Voltage - Supply電壓 | Frequency Stability頻率穩(wěn)定度 |
531BB125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±20ppm |
531FB200M000DG | Silicon振蕩器 | Si531 | 200MHz | 2.5V | ±20ppm |
531FC250M000DG | Silicon振蕩器 | Si531 | 250MHz | 2.5V | ±7ppm |
531FB125M000DG | Silicon振蕩器 | Si531 | 125MHz | 2.5V | ±20ppm |
531BC000110DG | Silicon振蕩器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
531BC200M000DG | Silicon振蕩器 | Si531 | 200MHz | 3.3V | ±7ppm |
531BC250M000DG | Silicon振蕩器 | Si531 | 250MHz | 3.3V | ±7ppm |
531BC125M000DG | Silicon振蕩器 | Si531 | 125MHz | 3.3V | ±7ppm |
531FB106M250DG | Silicon振蕩器 | Si531 | 106.25MHz | 2.5V | ±20ppm |
531AC156M250DG | Silicon振蕩器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
531AC200M000DG | Silicon振蕩器 | Si531 | 200MHz | 3.3V | ±7ppm |
531BC148M500DG | Silicon振蕩器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
531BC156M250DG | Silicon振蕩器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
531AC125M000DG | Silicon振蕩器 | Si531 | 125MHz | 3.3V | ±7ppm |
531FC125M000DG | Silicon振蕩器 | Si531 | 125MHz | 2.5V | ±7ppm |
531FC156M250DG | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
531FC148M500DG | Silicon振蕩器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
531AC155M520DG | Silicon振蕩器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
531BC155M520DG | Silicon振蕩器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
531FC200M000DG | Silicon振蕩器 | Si531 | 200MHz | 2.5V | ±7ppm |
531AC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
531AC312M500DG | Silicon振蕩器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
531AC106M250DG | Silicon振蕩器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
531EC106M250DG | Silicon振蕩器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
531BC187M500DG | Silicon振蕩器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
531EC155M520DG | Silicon振蕩器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
531AC187M500DG | Silicon振蕩器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
531EC187M500DG | Silicon振蕩器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
531EC000110DG | Silicon振蕩器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
531EC148M500DG | Silicon振蕩器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
531FC155M520DG | Silicon振蕩器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
531EC156M250DG | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
531AC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
531BC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
531EC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 2.5V | ±7ppm |
531EC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 2.5V | ±7ppm |
531FC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 2.5V | ±7ppm |
531FC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 2.5V | ±7ppm |
531BC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
531FC312M500DG | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
531EC312M500DG | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
531AC250M000DG | Silicon振蕩器 | Si531 | 250MHz | 3.3V | ±7ppm |
531EC250M000DG | Silicon振蕩器 | Si531 | 250MHz | 2.5V | ±7ppm |
531BC312M500DG | Silicon振蕩器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
531AA156M250DG | Silicon振蕩器 | Si531 | 156.25MHz | 3.3V | ±50ppm |
531BC106M250DG | Silicon振蕩器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
531EC125M000DG | Silicon振蕩器 | Si531 | 125MHz | 2.5V | ±7ppm |
531FC106M250DG | Silicon振蕩器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
531FC187M500DG | Silicon振蕩器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
531FC000110DG | Silicon振蕩器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
531EC200M000DG | Silicon振蕩器 | Si531 | 200MHz | 2.5V | ±7ppm |
531AC000110DG | Silicon振蕩器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
531AC148M500DG | Silicon振蕩器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
550CD74M2500DGR | Silicon振蕩器 | Si550 | 74.25MHz | 3.3V | ±50ppm |
531AC125M000DGR | Silicon振蕩器 | Si531 | 125MHz | 3.3V | ±7ppm |
531BC125M000DGR | Silicon振蕩器 | Si531 | 125MHz | 3.3V | ±7ppm |
531EC125M000DGR | Silicon振蕩器 | Si531 | 125MHz | 2.5V | ±7ppm |
531FC125M000DGR | Silicon振蕩器 | Si531 | 125MHz | 2.5V | ±7ppm |
531AC106M250DGR | Silicon振蕩器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
531BC106M250DGR | Silicon振蕩器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
531EC106M250DGR | Silicon振蕩器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
531FC106M250DGR | Silicon振蕩器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
531FC25M0000DGR | Silicon振蕩器 | Si531 | 25MHz | 2.5V | ±7ppm |
531AC155M520DGR | Silicon振蕩器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
531AC156M250DGR | Silicon振蕩器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
531BC155M520DGR | Silicon振蕩器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
531BC156M250DGR | Silicon振蕩器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
531EC155M520DGR | Silicon振蕩器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
531EC156M250DGR | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
531FC155M520DGR | Silicon振蕩器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
531FC156M250DGR | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
531AC187M500DGR | Silicon振蕩器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
531BC187M500DGR | Silicon振蕩器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
531EC187M500DGR | Silicon振蕩器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
531FC187M500DGR | Silicon振蕩器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
531AC000110DGR | Silicon振蕩器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
531AC148M500DGR | Silicon振蕩器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
531AC200M000DGR | Silicon Crystal | Si531 | 200MHz | 3.3V | ±7ppm |
531BC000110DGR | Silicon振蕩器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
531BC148M500DGR | Silicon振蕩器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
531BC200M000DGR | Silicon振蕩器 | Si531 | 200MHz | 3.3V | ±7ppm |
531EC000110DGR | Silicon振蕩器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
531EC148M500DGR | Silicon振蕩器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
531EC200M000DGR | Silicon振蕩器 | Si531 | 200MHz | 2.5V | ±7ppm |
531FC000110DGR | Silicon振蕩器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
531FC148M500DGR | Silicon振蕩器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
531FC200M000DGR | Silicon振蕩器 | Si531 | 200MHz | 2.5V | ±7ppm |
550AE100M000DGR | Silicon振蕩器 | Si550 | 100MHz | 3.3V | ±20ppm |
550AE100M000DG | Silicon振蕩器 | Si550 | 100MHz | 3.3V | ±20ppm |
531AC312M500DGR | Silicon振蕩器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
531BC312M500DGR | Silicon振蕩器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
531EC312M500DGR | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
531FC312M500DGR | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
531AC250M000DGR | Silicon振蕩器 | Si531 | 250MHz | 3.3V | ±7ppm |
531AC311M040DGR | Silicon振蕩器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
531AC622M080DGR | Silicon振蕩器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
531BC250M000DGR | Silicon振蕩器 | Si531 | 250MHz | 3.3V | ±7ppm |
Si595發(fā)射器晶振,思佳訊壓控差分振蕩器,595AE192M000DG,尺寸7.0x5.0mm,頻率212MHZ,輸出邏輯LVDS,電壓2.5V,頻率穩(wěn)定性20ppm,歐美壓控振蕩器,Skyworks有源晶振,思佳訊差分晶振,7050mm差分晶振,差分晶振LVDS,壓控差分晶振,VCXO壓控晶體振蕩器,差分晶體振蕩器,石英差分振蕩器,貼片差分晶振,差分有源晶振,差分貼片振蕩器,有源壓控晶振,六腳差分晶振,高質(zhì)量差分晶振,高頻差分振蕩器,高性能差分晶振,低抖動(dòng)差分晶振,低損耗差分晶振,低電壓差分晶振,低耗能差分晶振,低功耗差分晶振,低損耗差分晶振,低相位差分晶振,低相噪差分晶振,發(fā)射器差分晶振,網(wǎng)絡(luò)設(shè)備差分晶振,智能家電差分晶振,無(wú)線模塊差分晶振,轉(zhuǎn)換機(jī)差分晶振,便攜式設(shè)備差分晶振,儀器設(shè)備差分晶振,具有良好的耐壓性能。
Si595 VCXO壓控晶體振蕩器利用Skyworks Solutions的先進(jìn)DSPLL®電路在高頻下提供低抖動(dòng)時(shí)鐘。Si595具有從10到810MHz的任何速率輸出頻率。與傳統(tǒng)的VCXO不同,其中每個(gè)輸出頻率需要不同的晶體,Si595使用一個(gè)固定晶體來(lái)提供寬范圍的輸出頻率。這種基于IC的方法允許晶體諧振器提供卓越的性能頻率穩(wěn)定性和可靠性。Si595發(fā)射器晶振,思佳訊壓控差分振蕩器,595AE192M000DG.
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