86-0755-27838351
頻率:156.25MHZ
尺寸:7.00mmx5.00mm
Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無線網(wǎng)絡(luò)晶振,尺寸7.00mmx5.00mm,頻率156.25MHZ,支持輸出LVPECL,XO時鐘振蕩器(標(biāo)準(zhǔn)),電壓 2.5V,腳位6-SMD,六腳貼片晶振,有源晶振,有源貼片晶振,LVPECL輸出晶振,差分晶振LV-PECL,貼片差分晶振,差分晶體振蕩器,低電壓差分晶振,低功耗差分晶振,低相位差分晶振,低抖動差分晶振,網(wǎng)絡(luò)應(yīng)用差分晶振,高清視頻差分晶振,測試測量專用差分晶振,具有低抖動低電壓的特點(diǎn),產(chǎn)品十分適合用于SONET/SDH,網(wǎng)絡(luò) 標(biāo)清/高清視頻,測試和測量,時鐘和數(shù)據(jù)恢復(fù),F(xiàn)PGA/ASIC時鐘生成等領(lǐng)域。
基于Si530/531 IC的XO有源晶體振蕩器可在工廠進(jìn)行配置對于包括頻率、電源電壓、電源電壓等的各種各樣的用戶規(guī)范,輸出格式和溫度穩(wěn)定性。具體配置為出廠配置在裝運(yùn)時進(jìn)行編程,從而消除長交付周期與定制振蕩器相關(guān)。Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無線網(wǎng)絡(luò)晶振.
Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無線網(wǎng)絡(luò)晶振,尺寸7.00mmx5.00mm,頻率156.25MHZ,支持輸出LVPECL,XO時鐘振蕩器(標(biāo)準(zhǔn)),電壓 2.5V,腳位6-SMD,六腳貼片晶振,有源晶振,有源貼片晶振,LVPECL輸出晶振,差分晶振LV-PECL,貼片差分晶振,差分晶體振蕩器,低電壓差分晶振,低功耗差分晶振,低相位差分晶振,低抖動差分晶振,網(wǎng)絡(luò)應(yīng)用差分晶振,高清視頻差分晶振,測試測量專用差分晶振,具有低抖動低電壓的特點(diǎn),產(chǎn)品十分適合用于SONET/SDH,網(wǎng)絡(luò) 標(biāo)清/高清視頻,測試和測量,時鐘和數(shù)據(jù)恢復(fù),F(xiàn)PGA/ASIC時鐘生成等領(lǐng)域。
基于Si530/531 IC的XO有源晶體振蕩器可在工廠進(jìn)行配置對于包括頻率、電源電壓、電源電壓等的各種各樣的用戶規(guī)范,輸出格式和溫度穩(wěn)定性。具體配置為出廠配置在裝運(yùn)時進(jìn)行編程,從而消除長交付周期與定制振蕩器相關(guān)。Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無線網(wǎng)絡(luò)晶振.
Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無線網(wǎng)絡(luò)晶振 參數(shù)表
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
Supply Voltage1 | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||||
2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||||
1.8 V option | 1.71 | 1.8 | 1.89 | V | ||||||||||||||||||||
Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
— — — — |
111 99 90 81 |
121 108 98 88 |
mA | ||||||||||||||||||
Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||||
Output Enable (OE)2 | VIH | 0.75 x V DD | — | — | V | |||||||||||||||||||
VIL | — | — | 0.5 | V | ||||||||||||||||||||
Operating Temperature Range | TA | –40 | — | 85 | ºC |
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
Nominal Frequency1,2 | fO | LVPECL/LVDS/CML | 10 | — | 945 | MHz | ||||||||||||||||||
CMOS | 10 | — | 160 | MHz | ||||||||||||||||||||
Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||||
Temperature Stability1,3 |
–7 –20 –50 |
— |
+7 +20 +50 |
ppm | ||||||||||||||||||||
Aging | fa | Frequency drift over first year | — | — | ±3 | ppm | ||||||||||||||||||
Frequency drift over 20 year life |
— | — | ±10 | ppm |
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
Total Stability | Temp stability = ±7 ppm | — | — | ±20 | ppm | |||||||||||||||||||
Temp stability = ±20 ppm | — | — | ±31.5 | ppm | ||||||||||||||||||||
Temp stability = ±50 ppm | ±61.5 | ppm | ||||||||||||||||||||||
Powerup Time4 | tOSC | 10 | ms |
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
LVPECL Output Option1 | VO | mid-level | V DD – 1.42 | — | V DD – 1.25 | V | ||||||||||||||||||
VOD | swing (diff) | 1.1 | — | 1.9 | VPP | |||||||||||||||||||
VSE | swing (single-ended) | 0.55 | — | 0.95 | VPP | |||||||||||||||||||
LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | ||||||||||||||||||
VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | |||||||||||||||||||
CML Output Option2 | VO | 2.5/3.3 V option mid-level | V DD – 1.30 | V | ||||||||||||||||||||
1.8 V option mid-level | V DD – 0.36 | V | ||||||||||||||||||||||
VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | |||||||||||||||||||
1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | ||||||||||||||||||||
CMOS Output Option3 | V OH | I OH= 32 mA | 0.8 x V DD | V DD | V | |||||||||||||||||||
VOL | I OL= 32 mA | 0.4 | V | |||||||||||||||||||||
Rise/Fall time (20/80%) | tR,t F | LVPECL/LVDS/CML | 350 | ps | ||||||||||||||||||||
CMOS with CL= 15 pF | 1 | ns | ||||||||||||||||||||||
Symmetry (duty cycle) | SYM |
LVPECL: (diff) LVDS: CMOS: |
V DD – 1.3 V 1.25 V (diff) V DD/2 |
45 | 55 | % |
OSC晶振產(chǎn)品特性:
可用于任何速率的輸出
頻率從10兆赫到945兆赫
并選擇1.4 GHz的頻率
集成superior的第三代DSPLL 抖動性能
頻率穩(wěn)定性比高3倍
基于SAW的振蕩器
內(nèi)部固定晶振頻率
確保高可靠性和低老化
可用的CMOS、LVPECL、 LVDS和CML輸出 3.3、2.5和1.8 V電源選項(xiàng)
行業(yè)標(biāo)準(zhǔn)5 x 7毫米
封裝和引腳排列
更多相關(guān)美國Silicon晶振型號
歐美晶振原廠代碼
Manufacturer品牌
Series型號
Frequency 頻率
Voltage - Supply電壓
Frequency Stability頻率穩(wěn)定度
531EC155M520DG
Silicon振蕩器
Si531
155.52MHz
2.5V
±7ppm
530EC187M500DG
Silicon振蕩器
Si530
187.5MHz
2.5V
±7ppm
531AC187M500DG
Silicon振蕩器
Si531
187.5MHz
3.3V
±7ppm
531EC187M500DG
Silicon振蕩器
Si531
187.5MHz
2.5V
±7ppm
530AC000110DG
Silicon振蕩器
Si530
148.35165MHz
3.3V
±7ppm
530AC148M500DG
Silicon振蕩器
Si530
148.5MHz
3.3V
±7ppm
530EC000110DG
Silicon振蕩器
Si530
148.35165MHz
2.5V
±7ppm
530FC000110DG
Silicon振蕩器
Si530
148.35165MHz
2.5V
±7ppm
531EC000110DG
Silicon振蕩器
Si531
148.35165MHz
2.5V
±7ppm
531EC148M500DG
Silicon振蕩器
Si531
148.5MHz
2.5V
±7ppm
530BC155M520DG
Silicon振蕩器
Si530
155.52MHz
3.3V
±7ppm
530EC156M250DG
Silicon振蕩器
Si530
156.25MHz
2.5V
±7ppm
530AC187M500DG
Silicon振蕩器
Si530
187.5MHz
3.3V
±7ppm
530BC187M500DG
Silicon振蕩器
Si530
187.5MHz
3.3V
±7ppm
530FC187M500DG
Silicon振蕩器
Si530
187.5MHz
2.5V
±7ppm
530EC148M500DG
Silicon振蕩器
Si530
148.5MHz
2.5V
±7ppm
530EC200M000DG
Silicon振蕩器
Si530
200MHz
2.5V
±7ppm
531FC155M520DG
Silicon振蕩器
Si531
155.52MHz
2.5V
±7ppm
531EC156M250DG
Silicon振蕩器
Si531
156.25MHz
2.5V
±7ppm
530FC155M520DG
Silicon振蕩器
Si530
155.52MHz
2.5V
±7ppm
530BC000110DG
Silicon振蕩器
Si530
148.35165MHz
3.3V
±7ppm
530FC148M500DG
Silicon振蕩器
Si530
148.5MHz
2.5V
±7ppm
536AB125M000DG
Silicon振蕩器
Si536
125MHz
3.3V
±20ppm
535EB125M000DG
Silicon振蕩器
Si535
125MHz
2.5V
±20ppm
536EB125M000DG
Silicon振蕩器
Si536
125MHz
2.5V
±20ppm
535BB125M000DG
Silicon振蕩器
Si535
125MHz
3.3V
±20ppm
535BB156M250DG
Silicon振蕩器
Si535
156.25MHz
3.3V
±20ppm
535FB156M250DG
Silicon振蕩器
Si535
156.25MHz
2.5V
±20ppm
530EC312M500DG
Silicon振蕩器
Si530
312.5MHz
2.5V
±7ppm
530BC250M000DG
Silicon晶振
Si530
250MHz
3.3V
±7ppm
530EC311M040DG
Silicon振蕩器
Si530
311.04MHz
2.5V
±7ppm
530FC311M040DG
Silicon振蕩器
Si530
311.04MHz
2.5V
±7ppm
530FC622M080DG
Silicon振蕩器
Si530
622.08MHz
2.5V
±7ppm
531AC311M040DG
Silicon振蕩器
Si531
311.04MHz
3.3V
±7ppm
531BC311M040DG
Silicon振蕩器
Si531
311.04MHz
3.3V
±7ppm
531EC311M040DG
Silicon振蕩器
Si531
311.04MHz
2.5V
±7ppm
531EC622M080DG
Silicon振蕩器
Si531
622.08MHz
2.5V
±7ppm
531FC622M080DG
Silicon振蕩器
Si531
622.08MHz
2.5V
±7ppm
531FC311M040DG
Silicon振蕩器
Si531
311.04MHz
2.5V
±7ppm
530BC311M040DG
Silicon振蕩器
Si530
311.04MHz
3.3V
±7ppm
531BC622M080DG
Silicon振蕩器
Si531
622.08MHz
3.3V
±7ppm
531FC312M500DG
Silicon振蕩器
Si531
312.5MHz
2.5V
±7ppm
530EC622M080DG
Silicon振蕩器
Si530
622.08MHz
2.5V
±7ppm
531EC312M500DG
Silicon振蕩器
Si531
312.5MHz
2.5V
±7ppm
530BC622M080DG
Silicon振蕩器
Si530
622.08MHz
3.3V
±7ppm
531AC250M000DG
Silicon振蕩器
Si531
250MHz
3.3V
±7ppm
530AC311M040DG
Silicon振蕩器
Si530
311.04MHz
3.3V
±7ppm
530FC312M500DG
Silicon振蕩器
Si530
312.5MHz
2.5V
±7ppm
531EC250M000DG
Silicon振蕩器
Si531
250MHz
2.5V
±7ppm
530AC312M500DG
Silicon振蕩器
Si530
312.5MHz
3.3V
±7ppm
530EC250M000DG
Silicon振蕩器
Si530
250MHz
2.5V
±7ppm
530AC250M000DG
Silicon振蕩器
Si530
250MHz
3.3V
±7ppm
530FC250M000DG
Silicon振蕩器
Si530
250MHz
2.5V
±7ppm
530BC312M500DG
Silicon振蕩器
Si530
312.5MHz
3.3V
±7ppm
531BC312M500DG
Silicon振蕩器
Si531
312.5MHz
3.3V
±7ppm
530FC50M0000DG
Silicon振蕩器
Si530
50MHz
2.5V
±7ppm
535AB125M000DG
Silicon振蕩器
Si535
125MHz
3.3V
±20ppm
Si591視聽設(shè)備晶振,591BC200M000DG,思佳訊SMD差分晶振,尺寸7.0x5.0mm,頻率200MHZ,輸出邏輯LVDS,電壓3.3V,頻率穩(wěn)定性20ppm,Skyworks差分晶振,思佳訊LVDS有源振蕩器,六腳差分振蕩器,貼片差分晶振,7050mm差分晶振,有源差分振蕩器,差分晶振LVDS,差分晶體振蕩器,石英差分振蕩器,低電壓差分晶振,低耗能差分晶振,高精度差分晶振,高頻差分振蕩器,低損耗差分振蕩器,低抖動差分晶振,低功耗差分晶振,低相位差分晶振,低相噪差分晶振,視聽設(shè)備差分晶振,北斗導(dǎo)航差分晶振,儀器儀表差分晶振,無線模塊專用差分晶振,測試測量差分晶振,交換機(jī)差分晶振,衛(wèi)星通信專用差分晶振,具有低抖動低相位的特點(diǎn)。
貼片差分晶振產(chǎn)品比較適合用于視聽設(shè)備,北斗導(dǎo)航,儀器儀表,無線模塊,測試測量,交換機(jī),衛(wèi)星通信等領(lǐng)域.Si591視聽設(shè)備晶振,591BC200M000DG,思佳訊SMD差分晶振.
電話:+86-0755-27838351
手機(jī):13823300879
QQ:632862232
地址:廣東深圳市寶安寶安大道東95號浙商銀行大廈1905